The Design of Inverter and Ring Oscillator

This paper presents the application of floating-gate MOSFET (FGMOS) in the design of low voltage and high speed digital circuits wherein threshold voltage tunability of FGMOS has been exploited to enhance the performance of inverter in terms of various parameters like switching threshold voltage, noise margins, propagation delay and energy delay product. It has been observed that by varying the bias voltage in FGMOS, the voltage transfer characteristics can be altered that result in lowering of switching threshold voltage, increased noise margins, reduced propagation delay and less energy delay product as compared to the standard CMOS inverter. This paper also demonstrates the design of ring oscillator using FGMOS and it has been found that FGMOS based ring oscillator exhibits higher frequency of oscillation as compared to its CMOS counterpart. The performance of these circuits has been verified through PSpice simulations carried out using level 7 parameters in 0.13 μm CMOS technology with a supply voltage of 1 V.